E-postama gönder DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITION
Öz
DIODE PROPERTY OF n-ZnO/p-Si HETEROJUNCTION STRUCTURE IN THE DARK AND ILLUMINATION CONDITION
Abstract
In this study, Zinc Oxide (ZnO) thin film was deposited on the Silicon (Si) wafer by Pulsed Laser Deposition (PLD) to form n-ZnO/p-Si heterojunction. The morphological and the crystal structure of ZnO thin film was analysed and interpreted by Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD), respectively. The absorption spectrum was obtained by using the UV-Vis spectra and the band gap (Eg) was found by using Tauc Law. The current density-Voltage (J-V) plot was obtained at room temperature (RT) in the dark and under illumination. The barrier height (BH) and ideality factor were found about 0.46 eV and 1.35, respectively. The largest values of open circuit voltage (Voc) and short-circuit current (Jsc) were about 100 mV and 3×10-2 mA/cm2, respectively. It has been measured that ZnO/Si heterojunction diode behaves a solar cell like device under the illumination conditions.
Keywords: Heterojunction, open circuit voltage, short circuit current, barrier height, ideality factor
KARANLIK ve AYDINLIK ŞARTLARDA n-ZnO/p-Si HETEROEKLEM YAPISININ DİYOT ÖZELLİĞİ
Özet
Bu çalışmada, n-ZnO/p-Si heteroeklem oluşturmak için Silikon (Si) wafer üzerine Çinko Oksit (ZnO) ince film Puls Lazer Deposizasyon (PLD) ile depozit edilmiştir. ZnO ince filmin morfolojik ve kristal yapısı, sırasıyla Atomik Kuvvet Mikroskopu (AFM) ve X-Ray Kırınımı (XRD) ile analiz edilmiş ve yorumlanmıştır. Soğurma spektrumu UV-Vis spektrumu kullanılarak elde edilmiş ve bant aralığı (Eg) Tauc yasası kullanılarak bulunmuştur. Akım yoğunluğu-Gerilim (J-V) grafiği, oda sıcaklığında (RT) karanlıkta ortamda ve ışık altında elde edilmiştir. Bariyer yüksekliği (BH) ve idealite faktörü sırasıyla yaklaşık 0.46 eV ve 1.35 bulunmuştur. Açık devre voltajının (Voc) ve kısa devre akım yoğunluğunun (Jsc) en büyük değerleri sırasıyla 100 mV ve 3x10-2 mA/cm2’dir. ZnO/Si heteroeklem diyotunun ışık altında güneş piline benzer bir cihaz gibi davrandığı gözlemlenmiştir.
Anahtar Kelimeler: Heteroeklem, açık devre voltajı, kısa devre akımı, bariyer yüksekliği, idealite faktörü
Anahtar Kelimeler
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